5秒后页面跳转
2N2906AUBC PDF预览

2N2906AUBC

更新时间: 2024-02-29 19:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 101K
描述
RADIATION HARDENED

2N2906AUBC 数据手册

 浏览型号2N2906AUBC的Datasheet PDF文件第2页浏览型号2N2906AUBC的Datasheet PDF文件第3页浏览型号2N2906AUBC的Datasheet PDF文件第4页浏览型号2N2906AUBC的Datasheet PDF文件第5页浏览型号2N2906AUBC的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/291  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
2N2906A  
2N2907A  
2N2906AL  
2N2906AUA  
2N2906AUB  
2N2907AL  
2N2907AUA  
2N2907AUB  
2N2906AUBC 2N2907AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current  
600  
TO-18 (TO-206AA)  
2N2906A, 2N2907A  
(1)  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.5  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
(1)  
Thermal Resistance, Junction-to-Ambient  
325  
°C/W  
RθJA  
4 PIN  
1. See MIL-PRF-19500/291 for derating curves.  
2N2906AUA, 2N2907AUA  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
60  
Vdc  
Collector-Base Cutoff Current  
10  
10  
μAdc  
ηAdc  
3 PIN  
ICBO  
VCB = 60Vdc  
2N2906AUB, 2N2907AUB  
2N2906AUBC, 2N2907AUBC  
(UBC = Ceramic Lid Version)  
VCB = 50Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
10  
50  
μAdc  
ηAdc  
IEBO  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
ICES  
50  
ηAdc  
VCE = 50Vdc  
T4-LDS-0055 Rev. 4 (100247)  
Page 1 of 6  

与2N2906AUBC相关器件

型号 品牌 描述 获取价格 数据表
2N2906CSM SEME-LAB Bipolar PNP Device in a Hermetically sealed LCC1

获取价格

2N2906DCSM SEME-LAB Dual Bipolar PNP Devices in a hermetically sealed

获取价格

2N2906E KEC EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

获取价格

2N2906E_08 KEC Laser Marking

获取价格

2N2906J.TX.V RAYTHEON Medium Current General Purpose Amplifiers and Switches

获取价格

2N2906U KEC EPITAXIAL PLANAR PNP TRANSISTOR

获取价格