TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
2N2906A
2N2907A
2N2906AL
2N2906AUA
2N2906AUB
2N2907AL
2N2907AUA
2N2907AUB
2N2906AUBC 2N2907AUBC
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
60
60
Vdc
Vdc
Vdc
mAdc
W
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current
600
TO-18 (TO-206AA)
2N2906A, 2N2907A
(1)
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
PT
0.5
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
(1)
Thermal Resistance, Junction-to-Ambient
325
°C/W
RθJA
4 PIN
1. See MIL-PRF-19500/291 for derating curves.
2N2906AUA, 2N2907AUA
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Base Cutoff Current
10
10
μAdc
ηAdc
3 PIN
ICBO
VCB = 60Vdc
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
VCB = 50Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
10
50
μAdc
ηAdc
IEBO
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
ICES
50
ηAdc
VCE = 50Vdc
T4-LDS-0055 Rev. 4 (100247)
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