TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 255
Devices
2N2221A
Qualified Level
JAN
2N2222A
2N2221AL
2N2221AUA
2N2221AUB
2N2222AL
2N2222AUA
2N2222AUB
JANTX
JANTXV
JANS
JANHC
MAXIMUM RATINGS
Ratings
Symbol
VCEO
VCBO
VEBO
IC
All Types
Unit
Vdc
Vdc
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
50
75
6.0
800
TO-18* (TO-206AA)
2N2221A, 2N2222A
mAdc
Total Power Dissipation @ TA = +250C
2N2221A, L; 2N2222A, L (1)
0.5
0.65
0.50
W
PT
2N2221AUA; 2N2222AUA (2)
2N2221AUB; 2N2222AUB (1)
Operating & Storage Junction Temperature Range
-65 to +200
0C
Top, T
stg
4 PIN*
2N2221AUA, 2N2222AUA
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
325
210
325
0C/W
R
qJA
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
3 PIN*
2N2221AUB, 2N2222AUB
1) Derate linearly 3.08 mW/0C above TA > +37.50C
2) Derate linearly 4.76 mW/0C above TA > +63.50C
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
50
Vdc
V(BR)
CEO
Collector-Base Cutoff Current
VCB= 75 Vdc
VCB= 60 Vdc
mAdc
hAdc
ICBO
10
10
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
mAdc
hAdc
10
10
IEBO
Collector-Base Cutoff Current
VCE = 50 Vdc
50
ICES
hAdc
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