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2N2060L PDF预览

2N2060L

更新时间: 2024-01-17 02:08:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 56K
描述
UNITIZED DUAL NPN SILICON TRANSISTOR

2N2060L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.7JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2N2060L 数据手册

 浏览型号2N2060L的Datasheet PDF文件第2页 
TECHNICAL DATA  
UNITIZED DUAL NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 270  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N2060  
2N2060L  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
2N2060  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
Vdc  
7.0  
Vdc  
500  
mAdc  
One  
Both  
Section Sections  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
540  
1.5  
600  
2.12  
mW  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections  
TO-78*  
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage(3)  
RBE £ 10 W, IC = 10 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 30 mAdc  
80  
60  
Vdc  
Vdc  
V(BR)  
CER  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 100 Vdc  
VCB = 80 Vdc  
10  
2.0  
mAdc  
hAdc  
ICBO  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
VEB = 5.0 Vdc  
mAdc  
hAdc  
10  
2.0  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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