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2N1724 PDF预览

2N1724

更新时间: 2024-01-28 13:50:41
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管高功率电源
页数 文件大小 规格书
2页 55K
描述
NPN SILICON HIGH POWER TRANSISTOR

2N1724 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-61JESD-30 代码:O-MUPM-D3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:0.6 V
Base Number Matches:1

2N1724 数据手册

 浏览型号2N1724的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON HIGH POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 262  
Devices  
Qualified Level  
JAN  
JANTX  
2N1722  
2N1724  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
175  
10  
Vdc  
Vdc  
TO-61*  
Adc  
5.0  
2N1724  
Total Power Dissipation  
@ TA = +250C(1)  
3.0  
50  
W
PT  
@ TC = +1000C (2)  
W
0C  
TOP  
,
Temperature Range:  
Operating  
Storage Junction  
175  
-65 to +200  
T
stg  
1) Derate linearly 20 mW/0C for TA between +250C and +1750C  
TO-53*  
2N1722  
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
80  
10  
Vdc  
Vdc  
V(BR)  
CEO  
V(BR)  
EBO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCB = 175 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
300  
5.0  
ICES  
ICBO  
IEBO  
mAdc  
mAdc  
mAdc  
400  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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