是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.1 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N1711A | NJSEMI | Diode TP-39 |
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2N1711A | CENTRAL | Transistor, |
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2N1711A | ONSEMI | TRANSISTOR TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-5, BIP General Purpose Small Signal |
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2N1711B | ONSEMI | TRANSISTOR TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-5, BIP General Purpose Small Signal |
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2N1711B | CENTRAL | 50V,500mA,.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Sw |
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2N1711DWP | ZETEX | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2 |
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