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1.2KE5.0CE3 PDF预览

1.2KE5.0CE3

更新时间: 2024-01-14 16:34:20
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
1页 143K
描述
Trans Voltage Suppressor Diode, 1200W, 5V V(RWM), Bidirectional, 1 Element, Silicon,

1.2KE5.0CE3 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2最大非重复峰值反向功率耗散:1200 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
最大重复峰值反向电压:5 V表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1.2KE5.0CE3 数据手册

  

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