04M0
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIE SPECIFICATION
100V 300mA
MONOLITHIC DIODE ARRAY
5
FEATURES:
· INDIVIDUAL DIODES EQUIVALENT TO 1N4148
· Vf MATCH TO 5 mV at 10 mA
· ULTRA-HIGH SPEED SWITCHING
· QUAD ISOLATED DIODES
.049"
C
A
C
C
A
C
A
Absolute Maximum Ratings:
.023"
A
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
100
300
500
Vdc
mAdc
mAdc
IO
*1
Continuous Forward Current
*1 Peak Surge Current (tp= 1/120 s)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
Top
Tstg
-65 to +150 °C
-65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
Electrical Characteristics (Per Diode) @ 25°C unless otherwise
Symbol Parameter
Conditions
Min
Max Unit
BV1
BV2
Vf1
IR1
IR2
Ct
tfr
trr
VF5
Breakdown Voltage
Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
Reverse Recovery Time
Forward Voltage Match
IR = 100uAdc
IR = 5uAdc
IF = 100mAdc *1
VR = 40 Vdc
VR = 20 Vdc
VR = 0 Vdc; f = 1 MHz
IF = 100mAdc
IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
IF = 10 mA
100
75
1
0.1
25
4.0
15
5
Vdc
uAdc
nAdc
pF
ns
ns
5
mV
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Packaging Options:
W: Wafer (100% probed)
(sample probed)
Processing Options:
Standard: Capable of JANTXV application
(No Suffix)
U: Wafer
Metallization Options:
ORDERING INFORMATION
PART #: 04M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Standard: Al Top
(No Dash #)
/ Au Backside
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1023.PDF Rev - 11/25/98