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04M0

更新时间: 2024-02-13 22:37:49
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
1页 20K
描述
100V 300mA MONOLITHIC DIODE ARRAY

04M0 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:WAFER
包装说明:R-XUUC-N8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.9
Is Samacsys:N配置:SEPARATE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUUC-N8JESD-609代码:e0
元件数量:4端子数量:8
最大输出电流:0.3 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大反向恢复时间:0.005 µs表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

04M0 数据手册

  
04M0  
A Microsemi Company  
580 Pleasant St.  
Watertown, MA 02472  
Phone: 617-924-9280  
Fax: 617-924-1235  
DIE SPECIFICATION  
100V 300mA  
MONOLITHIC DIODE ARRAY  
5
FEATURES:  
· INDIVIDUAL DIODES EQUIVALENT TO 1N4148  
· Vf MATCH TO 5 mV at 10 mA  
· ULTRA-HIGH SPEED SWITCHING  
· QUAD ISOLATED DIODES  
.049"  
C
A
C
C
A
C
A
Absolute Maximum Ratings:  
.023"  
A
Symbol  
Parameter  
Limit  
Unit  
VBR(R) *1 *2 Reverse Breakdown Voltage  
100  
300  
500  
Vdc  
mAdc  
mAdc  
IO  
*1  
Continuous Forward Current  
*1 Peak Surge Current (tp= 1/120 s)  
Operating Junction Temperature Range  
Storage Temperature Range  
IFSM  
Top  
Tstg  
-65 to +150 °C  
-65 to +200 °C  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%  
Electrical Characteristics (Per Diode) @ 25°C unless otherwise  
Symbol Parameter  
Conditions  
Min  
Max Unit  
BV1  
BV2  
Vf1  
IR1  
IR2  
Ct  
tfr  
trr  
VF5  
Breakdown Voltage  
Breakdown Voltage  
Forward Voltage  
Reverse Current  
Reverse Current  
Capacitance (pin to pin)  
Forward Recovery Time  
Reverse Recovery Time  
Forward Voltage Match  
IR = 100uAdc  
IR = 5uAdc  
IF = 100mAdc *1  
VR = 40 Vdc  
VR = 20 Vdc  
VR = 0 Vdc; f = 1 MHz  
IF = 100mAdc  
IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms  
IF = 10 mA  
100  
75  
1
0.1  
25  
4.0  
15  
5
Vdc  
uAdc  
nAdc  
pF  
ns  
ns  
5
mV  
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge  
Packaging Options:  
W: Wafer (100% probed)  
(sample probed)  
Processing Options:  
Standard: Capable of JANTXV application  
(No Suffix)  
U: Wafer  
D:  
Chip (Waffle
 
Pack)  
B: Chip (Vial)  
Suffix C:  
Commercial  
Metallization Options:  
ORDERING INFORMATION  
PART #: 04M0_ _- _  
First Suffix Letter: Packaging Option  
Second Suffix Letter: Processing Option  
Dash #: Metallization Option  
Standard: Al Top  
(No Dash #)  
/ Au Backside  
Sertech reserves the right to make changes to any product design, specification or other  
information at any time without prior notice.  
MSC1023.PDF Rev - 11/25/98  

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