0405-1000M R3
.
0405-1000M
1000 Watts - 40 Volts, 300µs, 10%
UHF Pulsed Radar 400 - 450 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55SL, STYLE 2
The 0405-1000M is an internally matched, COMMON EMITTER transistor
capable of providing 1000 Watts of pulsed RF output power in a push-pull
configuration at three hundreds microsecond pulse width ten percent duty
factor across the frequency band 400-450 MHz. This hermetically sealed
transistor is specifically designed for medium pulse radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC1
1400 Watts
Maximum Voltage and Current
BVces
BVebo
Ic
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
85 Volts
3.5 Volts
70 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP MAX UNITS
Power Out (Note 2) Pulsed
F = 400-450 MHz
Vcc = 40 Volts,
1000
Watts
Pout
Power Gain
9.5
50
10
dB
%
dB
Pg
Pulse Width = 300 µs
Duty = 10 %
As above
Collector Efficiency
Pulse Amplitude Droop
Load Mismatch Tolerance
ηc
0.5
2:1
Pd
VSWR1
F = 425MHz, Po =1000W
FUNCTIONAL CHARACTERISTICS @ 25 OC
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage Current Veb = 3.0 Volts
DC Current Gain
Thermal Resistance
Ic = 5 mA
Vce = 50 Volts
80
10
Volts
mA
mA
Bvces
Ices
Iebo
Hfe
θjc1
30
25
Vce = 5 V, Ic = 100mA
Rated Pulse Condition
0.08
oC/W
Issue Nov. 2006
Note 1: Pulse width = 300 us, duty = 10%
Note 2: Power Input = 110 Watts Peak Pulsed
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324