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03512HWFE3 PDF预览

03512HWFE3

更新时间: 2024-01-17 03:18:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 栅极
页数 文件大小 规格书
3页 159K
描述
Silicon Controlled Rectifier, 63A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN

03512HWFE3 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66配置:SINGLE
最大直流栅极触发电流:150 mAJEDEC-95代码:TO-208AC
JESD-30 代码:O-MUPM-D2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
最大均方根通态电流:63 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

03512HWFE3 数据手册

 浏览型号03512HWFE3的Datasheet PDF文件第2页浏览型号03512HWFE3的Datasheet PDF文件第3页 

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