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MI5004-18

更新时间： 2024-09-21 10:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 专用微波二极管脉冲
页数 文件大小 规格书
1页 156K
描述
GaAs IMPATT DIODES

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中文翻译

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MI5004-18 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-CUPM-N1Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.72应用：PULSED
外壳连接：CATHODE配置：SINGLE
二极管元件材料：GALLIUM ARSENIDE二极管类型：IMPATT DIODE
JESD-30 代码：O-CUPM-N1元件数量：1
端子数量：1典型工作电流：1200 mA
最大工作频率：9.5 GHz最小工作频率：9.1 GHz
标称工作电压：55 V最小输出功率：12 W
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：POST/STUD MOUNT认证状态：Not Qualified
子类别：Microwave Special Purpose Diodes表面贴装：NO
技术：IMPATT端子形式：NO LEAD
端子位置：UPPERBase Number Matches：1

MI5004-18 数据手册

  
GaAs IMPATT DIODES  
®
TM  
MI5001 – MI5022  
Features  
●
●
●
Specified High Output Power  
High DC to Microwave Efficiency  
For Pulsed and CW Applications  
Applications  
●
Oscillators  
●
Avionic Systems  
●
Electronic Warfare Systems  
●
Smart Antennas  
Description  
Microsemi’s GaAs IMPATT diodes are fabricated utilizing  
low- dislocation epitaxial grown doping structures and  
with high-temperature metallization processes. The  
diodes have been designed to have high output power  
when measured in a critically coupled cavity at the  
frequency of operation. The M18 is the recommended  
package for MSC’s IMPATT diodes due to its low  
thermal resistance and threaded stud at the cathode. The  
stud should be mounted in a substantial heatsink.  
Other ceramic packages are also available.  
CW IMPATT Diodes (Specifications @ 25°C)  
Operating  
requency  
Min.  
P
Min.  
mA  
(V)  
Typ.  
Typ.  
T
IOP  
(A)  
yp.  
T
Eff.  
(%)  
yp.  
Max.  
  
°C/W  
Part  
Number  
F
VBR  
@
1
CT (0 V)  
(pF)  
VOP  
(V)  
Pkg.  
Style  
O
(GHz)  
(Watts)  
3.5  
MI5022-18  
9.5–10.2  
30  
20  
45  
0.40  
20  
12.0  
M18  
Pulsed IMPATT Diodes (Specifications @ 25°C)  
Operating  
requency  
Min.  
P
Min.  
@
Typ.  
Typ.  
T
IOP  
(A)  
yp.  
T
Eff.  
(%)  
yp.  
Max.  
  
°C/W  
Part  
Number  
F
VBR  
1
mA  
CT (0 V)  
(pF)  
VOP  
(V)  
Pkg.  
Style  
O
(GHz)  
(Watts)  
101  
(V)  
70  
45  
35  
MI5001-18  
MI5003-18  
MI5004-18  
5.1–5.4  
9.1–9.6  
9.1–9.5  
80  
75  
42  
85  
60  
55  
1.0  
1.7  
1.2  
12  
15  
18  
8.0  
9.5  
9.5  
M15  
M18  
M18  
151  
122  
1Pulse width 0.5–10  
S; duty cycle: 0.5–5%.  
2Pulse width 1–2  
S; duty cycle: 20–30%.  
Notes:  
IMP  
otal capacitance is specified at  
est procedure for measuring thermal resistance is available on request.  
Breakdown voltage is specified at mA.  
A
TT diodes are specified to operate at  
a
customer designated fixed frequency within the operating frequency band as measured in  
a
critically coupled cavity  
.
T
T
1
MHz.  
1
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  
Specifications are subject to change. Consult factory for the latest information.  
These products are supplied with a RoHS  
complaint Gold finish  
.
These devices are ESD sensitive and must be handled using ESD precautions.  
Microsemi  
Copyright 2008  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 1  
1

中文翻译

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