Datasheet > MHH02P650XK

MHH02P650XK

更新时间： 2023-12-06 20:11:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	420K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MHH02P650XK 数据手册

MHH02P650XK

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Typical ESD Protection HBM Class 2

Gate

Classification Voltage Range(V)

Bottom view

< 125

1. Gate 2. Source 3. Drain

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Source

DFN1006-3HF Plastic Package

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current ¹⁾

-V_DSS

V_GSS

-I_D

± 10

0.7

Pulsed Drain Current ²⁾

Power Dissipation ³⁾

-I_DM

P_D

0.36

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Symbol

R_θJA

Value

Unit

Parameter

t ≤ 10 s

Steady State

245

340

Thermal Resistance Junction to Ambient ³⁾

℃/W

¹⁾The maximum current limited by package.

²⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_jmax

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad.

1 / 6

Dated: 11/08/2021 6M Rev: 02

12 3 4 5 6

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