Datasheet > MHF20N60CT

MHF20N60CT

更新时间： 2024-09-25 01:25:59

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竹懋 - CITC		/
页数	文件大小	规格书
8页	2686K
描述
600V Silicon N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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MHF20N60CT 数据手册

MHF20N60CT

600V Silicon N-Channel Power MOSFET

■ Features

■ Outline

• Fast switching.

TO-220F

• ESD improved capability.

• Low gate charge.

• Low reverse transfer capacitances.

• 100% single pulse avalanche energy test.

0.189(4.80)

0.173(4.40)

0.409(10.40)

0.378(9.60)

0.114(2.90)

0.098(2.50)

0.638(16.20)

0.606(15.40)

Marking code

■ Mechanical data

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220F molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

0.056(1.42)

0.044(1.12)

0.102(2.60)

0.082(2.10)

Drain

0.551(14.0)

0.472(12.0)

• Polarity: As marked.

• Mounting Position : Any.

0.035(0.90)

0.028(0.70)

Gate

0.022(0.55)

0.014(0.35)

0.108(2.74)

0.092(2.34)

• Weight : Approximated 2.25 gram.

Source

Dimensions in inches and (millimeters)

■ Absolute(T_C= 25^OC unless otherwise specified)

Symbol

V_DSS

PARAMETER

CONDITIONS

MHF20N60CT

UNIT

Drain-Source Voltage

600

Continuous Drain Current

Pulsed Drain Current(1)

Gate-Source Voltage

I_D

T_C= 100^OC

I_DM

V_GS

E_AS

I_AR

±30

Single Pulse Avalanche Energy(2)

Avalanche Current(1)

1200

4.5

Repetitive Avalanche Energy(1)

E_AR

100

Power Dissipation

P_D

Derating factor above 25^OC

0.68

5.0

W/^OC

V/ns

^OC

Peak Diode Recovery dv/dt(3)

dV/dt

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum temperature for soldering

-55 ~ +150

300

^OC

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

2.L=10.0mH, I_D= 15.5A, Start T_J= 25^OC.

3.I_SD=20A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J= 25^OC.

Document ID : DS-21M60

Revised Date : 2015/09/16

Revision : C1

12 3 4 5 6 7 8

中文翻译

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