Datasheet > MH07N65CT

MH07N65CT

更新时间： 2024-09-18 01:25:59

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
8页	1257K
描述
650V Silicon N-Channel Power MOSFET

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中文翻译

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MH07N65CT 数据手册

MH07N65CT

650V Silicon N-Channel Power MOSFET

■ Outline

■ Features

TO-220AB

Dimensions in inches(millimeters)

• Fast switching.

symbol

Min

10.10

15.0

8.90

4.30

2.30

1.20

0.70

0.35

1.17

3.30

12.70

2.34

2.40

3.70

Max

10.50

16.0

9.50

4.80

3.00

1.40

0.90

0.55

1.37

3.80

14.70

2.74

3.00

3.90

• ESD improved capability.

• Low gate charge.

• Low reverse transfer capacitances.

• 100% single pulse avalanche energy test.

Marking code

■ Mechanical data

ØP

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220F molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

Drain

• Polarity: As marked.

Gate

• Mounting Position : Any.

• Weight : Approximated 2.25 gram.

Dimensions in inches and (millimeters)

Source

■ Absolute(T_C= 25^OC unless otherwise specified)

Symbol

V_DSS

PARAMETER

CONDITIONS

MH07N65CT

UNIT

Drain-Source Voltage

650

Continuous Drain Current

Pulsed Drain Current(1)

Gate-Source Voltage

I_D

T_C= 100^OC

4.5

I_DM

V_GS

E_AS

I_AR

±30

450

3.3

Single Pulse Avalanche Energy(2)

Avalanche Current(1)

Repetitive Avalanche Energy(1)

E_AR

100

0.8

Power Dissipation

P_D

Derating factor above 25^OC

W/^OC

V/ns

^OC

Peak Diode Recovery dv/dt(3)

Gate source ESD

dV/dt

V_ESD(G-S)

T_J, T_STG

T_L

5.0

HBM-C = 100pf, R = 1.5kΩ

3000

-55 ~ +150

300

Operating and Storage Temperature Range

Maximum temperature for soldering

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

2.L=10.0mH, I_D= 10.5A, Start T_J= 25^OC.

3.I_SD=7A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J= 25^OC.

Document ID : DS-21M66

Revised Date : 2015/09/16

Revision : C1

12 3 4 5 6 7 8

中文翻译

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