Datasheet > MGFC45V3642A_04

MGFC45V3642A_04

更新时间： 2024-09-23 04:10:47

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	230K
描述
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

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MGFC45V3642A_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V3642A

3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

unit : m

DESCRIPTION

OUTLINE

The MGFC45V3642A is an internally impedance-matched

GaAs power FET especially designed for use in 3.6 - 4.2

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

24 +/- 0.3

FEATURES

Class A operation

0.6 +/- 0.15

(1)

R1.2

Internally matched to 50(ohm) system

High output power

P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz

High power gain

(2)

GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz

High power added efficiency

P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz

Low distortion [item -51]

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

(3)

20.4 +/- 0.2

16.7

APPLICATION

item 01 : 3.6 - 4.2 GHz band power amplifier

item 51 : 3.6 - 4.2 GHz band digital radio communication

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

ID = 8 (A)

RG=25 (ohm)

(1) gate

(2) source(flange)

(3)drain

(Ta=25deg.C)

F-38

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them. Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

-15

IGR

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

-80

IGF

168

PT *1

Tch

150

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

175

deg.C

Tstg

-65 / +175

*1 : Tc=25deg.C

(Ta=25deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Unit

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

IDSS

Saturated drain current

Transconductance

VDS = 3V , VGS = 0V

VDS = 3V , ID = 8A

VGS(off)

Gate to source cut-off voltage

VDS = 3V , ID = 160mA

-2

-5

Output power at 1dB gain

compression

P1dB

dBm

GLP

Linear power gain

Drain current

VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-45

0.8

-42

dBc

deg.C/W

delta Vf method

*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz

*3 : Channel-case

MITSUBISHI

ELECTRIC

June/2004

12 3

中文翻译

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与MGFC45V3642A_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC45V3642A-01	MITSUBISHI	获取价格	Transistor
MGFC45V3642A-51	MITSUBISHI	获取价格	Transistor
MGFC45V4450A	MITSUBISHI	获取价格	4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V4450A_03	MITSUBISHI	获取价格	4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V4450A-51	MITSUBISHI	获取价格	Transistor
MGFC45V5053A	MITSUBISHI	获取价格	5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V5867	MITSUBISHI	获取价格	5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V5964A	MITSUBISHI	获取价格	5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V5964A_04	MITSUBISHI	获取价格	5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V6472A	MITSUBISHI	获取价格	6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

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