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MGFC45V3642A-01 PDF预览

MGFC45V3642A-01

更新时间： 2024-11-11 20:11:11
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
3页 146K
描述
Transistor

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MGFC45V3642A-01 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
最大漏极电流 (Abs) (ID)：25 AFET 技术：METAL SEMICONDUCTOR
最高工作温度：175 °C极性/信道类型：N-CHANNEL
功耗环境最大值：150 W子类别：Other Transistors
Base Number Matches：1

MGFC45V3642A-01 数据手册

 浏览型号MGFC45V3642A-01的Datasheet PDF文件第2页浏览型号MGFC45V3642A-01的Datasheet PDF文件第3页 
< C band internally matched power GaAs FET >  
MGFC45V3642A  
3.6 – 4.2 GHz BAND / 32W  
unit : mm  
DESCRIPTION  
OUTLINE  
The MGFC45V3642A is an internally impedance-matched  
GaAs power FET especially designed for use in 3.6 – 4.2  
GHz band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
24 +/- 0.3  
0.6 +/- 0.15  
(1)  
FEATURES  
Class A operation  
R1.2  
Internally matched to 50(ohm) system  
High output power  
P1dB=32W (TYP.) @f=3.6 – 4.2GHz  
High power gain  
(2)  
GLP=11.0dB (TYP.) @f=3.6 – 4.2GHz  
High power added efficiency  
P.A.E.=36% (TYP.) @f=3.6 – 4.2GHz  
Low distortion [item -51]  
(3)  
20.4 +/- 0.2  
16.7  
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L  
APPLICATION  
item 01 : 3.6 – 4.2 GHz band power amplifier  
item 51 : 3.6 – 4.2 GHz band digital radio communication  
QUALITY  
IG  
RECOMMENDED BIAS CONDITIONS  
(1) gate  
(2) source(flange)  
(3)drain  
VDS=10V ID=8A RG=25ohm  
GF-38  
Absolute maximum ratings (Ta=25C)  
Keep Safety first in your circuit designs!  
Mitsubishi Electric Corporation puts the maximum  
effort into making semiconductor products better  
and more reliable , but there is always the  
possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal  
injury , fire or property damage. Remember to give  
due consideration to safety when making your  
circuit designs , with appropriate measure such  
as (I) placement of substitutive , auxiliary circuits ,  
(ii) use of non-flammable material or (iii) prevention  
against any malfunction or mishap.  
Symbol  
VGDO  
Parameter  
breakdown voltage  
Ratings  
Unit  
V
Gate to drain  
-15  
VGSO Gate to source breakdown voltage  
-15  
V
ID  
Drain current  
25  
A
IGR  
IGF  
PT *1  
Tch  
Reverse gate current  
Forward gate current  
Total power dissipation  
Cannel temperature  
Storage temperature  
-80  
mA  
mA  
W
168  
150  
175  
C  
C  
Tstg  
*1 : Tc=25C  
-65 to +175  
Electrical characteristics  
(Ta=25C)  
Symbol  
Parameter  
Test conditions  
Limits  
Typ.  
24  
Unit  
Min.  
Max.  
Saturated drain current  
Transconductance  
VDS=3V,VGS=0V  
-
-
-
-
A
S
IDSS  
VDS=3V,ID=8A  
8
gm  
Gate to source cut-off voltage  
VDS=3V,ID=160mA  
-2  
44  
10  
-
-
-5  
-
V
VGS(off)  
P1dB  
GLP  
Output power at 1dB gain compression VDS=10V,ID(RF off)=8A  
45  
dBm  
dB  
A
f=3.6 – 4.2GHz  
Linear Power Gain  
Drain current  
11  
-
ID  
8
-
P.A.E.  
IM3 *2  
Rth(ch-c) *3  
Power added efficiency  
3rd order IM distortion  
Thermal resistance  
-
36  
-
%
-42  
-
-45  
0.8  
-
dBc  
C/W  
delta Vf method  
1
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=3.6,3.9,4.2GHz,delta f=10MHz  
*3 :Channel-case  
Publication Date : Apr., 2011  
1
123

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