Datasheet > MGFC42V5258_12

MGFC42V5258_12

更新时间： 2022-04-06 13:26:06

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	194K
描述
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET

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MGFC42V5258_12 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC42V5258

5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC42V5258 is an internally impedance-matched

GaAs power FET especially designed for use in 5.2 - 5.8

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE DRAWING

Unit: millimeters

24+/-0.3

R1.25

(1)

0.6+/-0.15

FEATURES

Class A operation

R1.2

Internally matched to 50(ohm) system

High output power

P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz

High power gain

(2)

GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz

High power added efficiency

P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz

(3)

20.4+/-0.2

13.4

APPLICATION

5.2 - 5.8 GHz band power amplifier

QUALITY GRADE

(1): GATE

(2): SOURCE (FLANGE)

(3): DRAIN

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

ID = 4.5 (A)

GF-18

RG=25 (ohm)

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them. Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

(Ta=25deg.C)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

VGDO

VGSO

-15

IGR

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

-40

IGF

Tch

78.9

175

deg.C

Tstg

-65 / +175

*1 : Tc=25deg.C

(Ta=25deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Typ.

Unit

Symbol

Parameter

Test conditions

Min.

Max.

IDSS

Saturated drain current

Transconductance

VDS = 3V , VGS = 0V

VDS = 3V , ID = 4.4A

VDS = 3V , ID = 80mA

VGS(off)

Gate to source cut-off voltage

-2

-3

-4

Output power at 1dB gain

compression

P1dB

41.5

42.5

dBm

GLP

Linear power gain

Drain current

VDS=10V, ID(RF off)=4.5A, f=5.2 - 5.8GHz

delta Vf method

10.5

4.5

P.A.E.

Power added efficiency

Rth(ch-c)

deg.C/W

Thermal resistance

1.9

*1 : Channel-case

MITSUBISHI

ELECTRIC

June/2004

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