品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
7页 | 246K | |
描述 | ||
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC1402-T01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1402-T02 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1402-T03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1403 | MITSUBISHI |
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FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE | |
MGFC1403-A03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MGFC1403-A13 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MGFC1403-T01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1403-T02 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1403-T03 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J | |
MGFC1412-T01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, J |