Datasheet > MG75HF12LEC1

MG75HF12LEC1

更新时间： 2024-04-09 19:02:06

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	176K
描述
C1

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MG75HF12LEC1 数据手册

RoHS

MG75HF12LEC1

COMPLIANT

IGBT Modules

VCES

1200V

75A

Applications



High frequency drivers

Solar inverters

UPS (Uninterruptible Power Supplies)

Electric welding machine

Circuit

Features



High speed IGBT in NPT technology

Low switching losses



High short circuit capability(10us)

Including ultra fast & soft recovery anti-parallel



FWD



Low inductance

Absolute Maximum Ratings（T_C= 25℃ unless otherwise specified）

Symbol

V_CES

Description

Values

1200

±20

Units

Collector - Emitter Voltage

Gate-Emitter Voltage

V_GES

T_C=25℃

100

I_C

DC Collector Current

T_C=80℃

I_CM(1)

I_F

Peak Collector Current Repetitive

Diode Continuous Forward Current

Maximum Power Dissipation (IGBT)

Maximum Junction Temperature

Operating Temperature

T_J= 125℃

150

T_J= 125℃

P_D

T_C= 25℃,T_Jmax=150℃

625

℃

T_J

150

T_JOP

T_stg

Viso

Weight

-40 ~ +150

-40 ~ +125

3000

155

Storage Temperature

Isolation Voltage (All Terminals Shorted)

Weight Of Module

f=50Hz, 1min

Power Terminals Screw:M5

Mounting Screw:M6

2.5~5

3~5

N*m

Mounting

Torque

Notes :

(1) Repetitive Rating: Pulse width limited by max. junction temperature

S-M098

Rev.1.0,27-Nov-19

www.21yangjie.com

12 3 4

下载PDF

与MG75HF12LEC1相关器件

型号	品牌	描述	获取价格	数据表
MG75HF12TFC1	YANGJIE	C1	获取价格
MG75HF12TLC1	YANGJIE	C1	获取价格
MG75J1BS11	TOSHIBA	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	获取价格
MG75J1SB11	TOSHIBA	TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor	获取价格
MG75J1ZS40	TOSHIBA	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	获取价格
MG75J1ZS50	TOSHIBA	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	获取价格