Datasheet > MG35P12P3

MG35P12P3

更新时间： 2024-04-09 19:01:16

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
13页	1104K
描述
P3

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数据手册

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MG35P12P3 数据手册

RoHS

MG35P12P3

COMPLIANT

IGBT Modules

V_CES

I_C

1200V

35A

Applications

·Motor Drivers

·AC and DC Servo Drive Amplifier

·UPS (Uninterruptible Power Supplies)

Features

Circuit

·Low switching losses

·Low V_CE(sat)with positive temperature coefficient

·Including fast & soft recovery anti-parallel FWD

·Low inductance case

·High short circuit capability(10us)

·Isolated heatsink using DBC technology

·Maximum junction temperature 175℃

 IGBT- inverter

Absolute Maximum Ratings

Symbol

Conditions

Value

Unit

Parameter

Collector-Emitter Voltage

Continuous Collector Current

Repetitive Peak Collector Current

Gate-Emitter Voltage

V_CES

I_C

V_GE=0V, I_C=1mA, T_vj=25℃

T_C=100℃, T_vjmax=175℃

t_p=1ms

1200

I_CRM

V_GES

P_tot

T_vj=25℃

±20

150

Total Power Dissipation

T_C=25℃,T_vjmax=175℃

S-M323

www.21yangjie.com

Rev.2.0A, 12-Dec-23

12 3 4 5 6 7...13

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