Datasheet > MG25P12P3

MG25P12P3

更新时间： 2024-11-21 15:18:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
13页	1122K
描述
P3

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中文翻译

获取价格

数据手册

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MG25P12P3 数据手册

RoHS

MG25P12P3

COMPLIANT

IGBT Modules

V_CES

I_C

1200V

25A

Applications

·Motor Drivers

·AC and DC Servo Drive Amplifier

·UPS (Uninterruptible Power Supplies)

Features

Circuit

·Low switching losses

·Low V_CE(sat)with positive temperature coefficient

·Including fast & soft recovery anti-parallel FWD

·Low inductance case

·High short circuit capability(10us)

·Isolated heatsink using DBC technology

·Maximum junction temperature 175℃

 IGBT- inverter

Absolute Maximum Ratings

Symbol

Conditions

Value

Unit

Parameter

Collector-Emitter Voltage

Continuous Collector Current

Repetitive Peak Collector Current

Gate-Emitter Voltage

V_CES

I_C

I_CRM

V_GES

V_GE=0V, I_C=1mA, T_vj=25℃

T_C=100℃,T_vjmax=175℃

tp=1ms

1200

T_vj=25℃

±20

T_C=25℃

Total Power Dissipation

P_tot

175

T_vjmax=175℃

S-M299

www.21yangjie.com

Rev.1.6, 8-Mar-23

12 3 4 5 6 7...13

中文翻译

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与MG25P12P3相关器件

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MG25Q1BS1	TOSHIBA	获取价格	TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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MG25Q2YS40	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG25Q2YS9	TOSHIBA	获取价格	TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG25Q2YS91	TOSHIBA	获取价格	TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG25Q6ES11	TOSHIBA	获取价格	TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG25Q6ES42	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG25Q6ES50	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)