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MG1800V1US51 PDF预览

MG1800V1US51

更新时间: 2024-11-24 21:17:39
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网电动机控制双极性晶体管
页数 文件大小 规格书
4页 79K
描述
TRANSISTOR 1800 A, 1700 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG1800V1US51 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):1800 A
集电极-发射极最大电压:1700 V门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:1
端子数量:7最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):8300 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
Base Number Matches:1

MG1800V1US51 数据手册

 浏览型号MG1800V1US51的Datasheet PDF文件第2页浏览型号MG1800V1US51的Datasheet PDF文件第3页浏览型号MG1800V1US51的Datasheet PDF文件第4页 
MG1 2 0 0 V1 US5 1 /  
MG1 8 0 0 V1 US5 1  
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