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MG150Q2YS91 PDF预览

MG150Q2YS91

更新时间: 2024-09-24 07:37:23
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网双极性晶体管功率控制
页数 文件大小 规格书
1页 68K
描述
TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG150Q2YS91 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code:unknown风险等级:5.71
最大集电极电流 (IC):150 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-PUFM-X7
元件数量:2端子数量:7
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
Base Number Matches:1

MG150Q2YS91 数据手册

  

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