生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code: | unknown | 风险等级: | 2.11 |
最大集电极电流 (IC): | 150 A | 集电极-发射极最大电压: | 1200 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 最大降落时间(tf): | 1000 ns |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1100 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG150Q2YS40 | TOSHIBA |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG150Q2YS50 | TOSHIBA |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG150Q2YS51 | TOSHIBA |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG150Q2YS65H | TOSHIBA |
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High Power & High Speed Switching Applications | |
MG150Q2YS9 | TOSHIBA |
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TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG150Q2YS91 | TOSHIBA |
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TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG1-513-GTQ | RCD |
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Fixed Resistor, 1W, 51000ohm, 250V, 2% +/-Tol | |
MG1-513-JB | RCD |
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Res,Axial,Film,51K Ohms,250WV,5% +/-Tol | |
MG1-513-JTQ | RCD |
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Fixed Resistor, 1W, 51000ohm, 250V, 5% +/-Tol | |
MG151A | MICRO-ELECTRONICS |
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Smart/Normal 7 Seg Numeric LED Display, 1-Character, Green, 12.7mm, CASE D-151, 10 PIN |