生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
针数: | 9 | Reach Compliance Code: | unknown |
风险等级: | 5.81 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 150 A |
集电极-发射极最大电压: | 450 V | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG150H1FL1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68C1A, 4 PIN, BIP General Purpose Po | |
MG150H2CL1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-80C1A, 9 PIN, BIP General | |
MG150H2DL1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-98C1A, 6 PIN, BIP General | |
MG150H2DL21 | TOSHIBA |
获取价格 |
MG150H2DL21 | |
MG150H2YL1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-96A1A, 9 PIN, BIP General | |
MG150H2YS1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 500 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor | |
MG150HF065TLC1 | YANGJIE |
获取价格 |
C1 | |
MG150HF12LEC2 | YANGJIE |
获取价格 |
C2 | |
MG150HF12MRC2 | YANGJIE |
获取价格 |
C2 | |
MG150HF12TFC1 | YANGJIE |
获取价格 |
C1 |