MG100Q2YS65H

更新时间： 2024-01-28 10:35:28

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管
页数	文件大小	规格书
6页	160K
描述
TOSHIBA IGBT Module Silicon N Channel IGBT

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数据手册

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MG100Q2YS65H 数据手册

MG100Q2YS65H

TOSHIBA IGBT Module Silicon N Channel IGBT

MG100Q2YS65H

High Power & High Speed Switching

Unit: mm

Applications

High input impedance

Enhancement-mode

The electrodes are isolated from case.

Equivalent Circuit

JEDEC

―

G1 E1/C2

JEITA

TOSHIBA

2-95A4A

Weight: 255 g (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

1200

±20

100

200

100

200

CES

GES

Collector current

1 ms

Forward current

1 ms

Collector power dissipation

690

(Tc = 25°C)

Junction temperature

150

°C

Storage temperature range

-40 to 125

°C

stg

2500

Isolation voltage

Isol

(AC 1 minute)

Terminal

Screw torque

N▪m

Mounting

2002-10-04

12 3 4 5 6

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