Datasheet > MFR9030MBR1

MFR9030MBR1

更新时间： 2024-11-17 03:02:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	622K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,TO-272

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MFR9030MBR1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	139 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)

MFR9030MBR1 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF9030M/D

The RF Sub-Micron MOSFET Line

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N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1.0 GHz. The high gain and broadband performance of these devices

make them ideal for large-signal, common-source amplifier applications in

26 volt base station equipment.

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

• Typical Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 20 dB

Efficiency — 41% (Two Tones)

IMD — -31 dBc

• Integrated ESD Protection

CASE 1265-08, STYLE 1

TO-270-2

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)

Output Power

PLASTIC

MRF9030MR1

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

CASE 1337-03, STYLE 1

TO-272-2

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

PLASTIC

MRF9030MBR1

13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

+15, -0.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

139

0.93

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

-65 to +150

175

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.08

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

Machine Model

Charge Device Model

MRF9030MR1

MRF9030MBR1

C7 (Minimum)

C6 (Minimum)

MOISTURE SENSITIVITY LEVEL

Test Methodology

Rating

Per JESD 22-A113

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF9030MR1 MRF9030MBR1

 Motorola, Inc. 2003

For More Information On This Product,

Go to: www.freescale.com

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与MFR9030MBR1相关器件

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MFR9030MR1	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,TO-270
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MFRC50001T0FE	NXP	获取价格	The "Original" MIFARE reader solution
MFRC522	NXP	获取价格
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