Datasheet > ME63BSO850

ME63BSO850

更新时间： 2024-09-21 18:09:59

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
2页	505K
描述
ME63BSO850 \| 6V ESD 3-Ch Bi-dir 50pF SOIC08

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中文翻译

获取价格

数据手册

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ME63BSO850 数据手册

ESD Suppressor

6V 3-Bidirectional SOIC-08

ME63BSO850

FEATURE

 IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)

 ESD Protection for three Bidirectional Channels

 Low Voltage Device

APPLICATION

 XDCL Transmission Equipment

 Data Cable

 T1/E1 Transmission Protection

 Ethernet Transmission Protection

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

Unit

ESD Voltage (Contact discharge)

±30

V_ESD

ESD Voltage (Air discharge)

Peak Pulse Voltage (10/1000μs)

Peak Pulse Current (10/1000μs)

Operating Temperature Range

Storage Temperature Range

V_PP

I_PP

3000

˚C

T_J

-40~+125

-40~+150

170

˚C

T_STG

R_ϴJA

˚C/W

Junction to Ambient on Printed Circuit

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Breakover Voltage

V_RWM

V_BO

V_T

I_PT=1000V/µs

I_T=2.2A

On-State Voltage

Reverse Leakage Current

Holding Current

I_R

V_R=6V

μA

I_H

10A, 10/1000µs

Off State Junction Capacitance

C_O

Vdc=1, f=1MHz, 2VBias

Notes: T_A= 25°C unless otherwise specified.

Rev. 0a 02/03/20

Meritek Electronics Corporation | www.meritekusa.com

中文翻译

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