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ME52U10D023P35  PDF预览

ME52U10D023P35

更新时间: 2024-11-13 18:09:27
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 508K
描述
ME52U10D023P35 | 10V Clamp 5V ESD 2Ch Uni-dir 0.35pF DFN10063

ME52U10D023P35 数据手册

 浏览型号ME52U10D023P35 的Datasheet PDF文件第2页浏览型号ME52U10D023P35 的Datasheet PDF文件第3页 
ESD Supressor  
5V 2-Unidirectional DFN1006-3  
ME52U10D023P35  
FEATURE  
IEC 61000-4-2 ESD: ±20KV (Air) ±15KV (Contact)  
IEC 61000-4-4 EFT: 40A (5/50ns)  
IEC 61000-4-5 Lightning: 4A (8/20μs)  
ESD Protection for two Unidirectional Channels  
Low Capacitance  
Low Clamping Voltage  
Solid-State Silicon-Avalanche Technology  
APPLICATION  
USB 3.0 Data Lines Protection  
Data and I/O Lines Protection  
Video Lines Protection  
Hand Held Portable Devices  
Destops and Notebooks  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
±15  
Unit  
KV  
KV  
˚C  
ESD Voltage per IEC61000-4-2 (Contact discharge)  
ESD Voltage per IEC61000-4-2 (Air discharge)  
Operating & Storage Temperature Range  
VESD  
±20  
TJ, TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
VRWM  
VBR  
IR  
--  
--  
5.5  
--  
--  
--  
5
--  
V
V
IBR=1mA  
VR=5V  
--  
50  
10  
15  
--  
nA  
IPP=1A, tp=8/20μs  
IPP=4A, tp=8/20μs  
IPP=8A, tp=100ns  
IPP=16A, tp=100ns  
tp=100ns  
--  
--  
Clamping Voltage  
VC  
V
--  
--  
--  
16  
23.5  
0.94  
Clamping Voltage TLP  
Dynamic Resistance  
VC  
V
--  
--  
RDYN  
--  
--  
Ω
Vdc=2.5, f=1MHz,  
Any I/O pins to GND  
--  
--  
0.30  
0.20  
0.35  
--  
Off State Junction Capacitance  
CJ  
pF  
Vdc=2.5, f=1MHz  
Between any I/O pins  
Notes:  
1. TJ= 25ºC unless otherwise specified  
2. Transmission Line Pulse (TLP) test condition: Z0=50Ω, tp=100ns  
Rev. 0a 02/05/20  
Meritek Electronics Corporation | www.meritekusa.com  

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