Datasheet > ME51B15D02

ME51B15D02

更新时间： 2024-11-18 18:09:59

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MERITEK		/
页数	文件大小	规格书
3页	483K
描述
ME51B15D02 \| 12V Clamp 5V ESD 1Ch Bi-dir 3.5pF DFN1006

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数据手册

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ME51B15D02 数据手册

ESD Supressor

5V Bidirectional DFN1006

ME51B15D02

FEATURE

 IEC 61000-4-2 ESD: ±15KV (Air) ±8KV (Contact)

 IEC 61000-4-4 EFT: 20A (5/50ns)

 IEC 61000-4-5 Lightning: 2A (8/20μs)

 ESD Protection for one Bidirectional Channel

 Low Leakage Current

 Low Clamping Voltage

 Solid-State Silicon-Avalanche Technology

APPLICATION

 Mobile Phones

 Hand Held Portable Applications

 Computer Interfaces Protection

 Microprocessors Protection

 Serial and Parallel Ports Protections

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

±8

Unit

˚C

ESD Voltage per IEC61000-4-2 (Contact discharge)

ESD Voltage per IEC61000-4-2 (Air discharge)

Operating & Storage Temperature Range

V_ESD

±15

T_J, T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

9.5

0.1

I_BR=1mA

V_R=5V

μA

I_PP=1A, tp=8/20μs

I_PP=2A, tp=8/20μs

I_PP=8A, tp=100ns

I_PP=16A, tp=100ns

tp=100ns

Clamping Voltage

V_C

12.1

13.7

0.2

Clamping Voltage TLP

Dynamic Resistance

R_DYN

C_J

Off State Junction Capacitance

Vdc=0, f=1MHz

3.5

Notes:

1. T_J= 25ºC unless otherwise specified

2. Transmission Line Pulse (TLP) test condition: Z0=50Ω, tp=100ns

Rev. 0a 02/05/20

Meritek Electronics Corporation | www.meritekusa.com

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中文翻译

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