Datasheet > ME51B11D01P35

ME51B11D01P35

更新时间： 2024-09-22 18:09:43

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	675K
描述
ME51B11D01P35 \| 11V Clamp 5V ESD 1Ch Bi-dir 0.35pF DFN0603

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数据手册

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ME51B11D01P35 数据手册

ESD Supressor

5V Bidirectioinal DFN0603

ME51B11D01P35

FEATURE

 IEC 61000-4-2 ESD: ±30KV (Air) ±25KV (Contact)

 ESD Protection for one Bidirectional Channel

 Ultra Small SMD Package

 Low Clamping Voltage

APPLICATION

 USB 2.0,USB3.0

 HDMI 1.3/1.4 and HDMI 2.0

 LVDS Interfaces

 FM Antenna

 PCI Express

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

Unit

ESD Voltage (Contact discharge)

±25

±30

V_ESD

ESD Voltage (Air discharge)

Maximum Peak Pulse Current (tp=8/20μs)

Operating Temperature Range

Storage Temperature Range

I_PP

T_J

4.5

˚C

-55~+125

-55~+150

T_STG

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Dynamic Resistance

V_RWM

V_BR

I_R

100

I_BR=1mA

V_R=5V

0.31

R_D

tp=100ns

I_PP=1A, tp=8/20μs

Clamping Voltage

V_C

I_PP=3A, tp=8/20μs

I_PP=-5A, TLP=0.2/100ns

I_PP=5A, TLP=0.2/100ns

I_PP=-30A, TLP=0.2/100ns

I_PP=30A, TLP=0.2/100ns

Vdc=0, f=1MHz,

-11

-18

0.25

Clamping Voltage TLP

V_C

C_J

Off State Junction Capacitance

0.35

Notes:

T_J= 25ºC unless otherwise specified

TLP Settings: tp=100ns, tr=0.2ns, I_TLPand V_TLPaveraging window: t1=70ns to t2=90ns.

Dynamic resistance calculated from I_TLP=-5A to I_TLP=-30A and I_TLP=+5A to I_TLP=+30A

Rev. 0a 02/14/20

Meritek Electronics Corporation | www.meritekusa.com

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