Datasheet > ME3V38B7SO16

ME3V38B7SO16

更新时间： 2024-11-19 18:09:15

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	670K
描述
ME3V38B7SO16 \| 7V Clamp 3.3V ESD 8-Ch Bi-dir 15pF SOIC16

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中文翻译

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数据手册

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ME3V38B7SO16 数据手册

ESD Supressor

3.3V 8-Bidirectional SOIC-16

ME3V38B7SO16

FEATURE

 IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)

 ESD Protection for eight Bidirectional Channels

 Low Leakage Current

 Low Capacitance and Clamping Voltages

 Solid-State Silicon-Avalanche Technology

APPLICATION

 Wireless Communication Circuit

 WAN Equipment

 CSU/DSU

 Multi Plexers

 Routers

 ISP Equipment

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

Unit

ESD Voltage (Contact discharge)

±30

V_ESD

ESD Voltage (Air discharge)

Peak Pulse Power(tp=8/20μs)

P_PP

500

˚C

Operating & Storage Temperature Range

T_J, T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

4.5

3.3

I_BR=1mA

V_R=3.3V, Each I/O Pin

I_PP=1A, tp=8/20μs

μA

Clamping Voltage

V_C

C_J

I_PP=10A, tp=8/20μs

Vdc=0, f=1MHz,

Between I/O pins and GND

Off State Junction Capacitance

Notes: T_J= 25ºC unless otherwise specified

Rev. 0a 02/03/20

Meritek Electronics Corporation | www.meritekusa.com

12 3

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