Datasheet > ME3V32U9D023

ME3V32U9D023

更新时间： 2024-09-22 18:09:15

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	539K
描述
ME3V32U9D023 \| 9V Clamp 3.3V ESD 2Ch Uni-dir 0.4pF DFN10063

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数据手册

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ME3V32U9D023 数据手册

ESD Supressor

3.3V 2-Unidirectional DFN1006-3

ME3V32U9D023

FEATURE

 IEC 61000-4-2 ESD: ±18KV (Air) ±15KV (Contact)



IEC 61000-4-4 EFT: 40A (5/50ns)

 IEC 61000-4-5 Lightning: 3A (8/20μs)

 Low Capacitance

 Low Clamping Voltage

 Solid-State Silicon-Avalanche Technology

APPLICATION

 USB 3.0 Data Lines Protection

 Data and I/O Lines Protection

 Video Lines Protection

 Hand Held Portable Devices

 Destops and Notebooks

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

±15

Unit

˚C

ESD Voltage per IEC61000-4-2 (Contact discharge)

ESD Voltage per IEC61000-4-2 (Air discharge)

Operating & Storage Temperature Range

V_ESD

±18

T_J, T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

3.3

I_BR=1mA

V_R=3.3V

I_PP=1A, tp=8/20μs

I_PP=3A, tp=8/20μs

I_PP=8A, tp=100ns

I_PP=16A, tp=100ns

tp=100ns

Clamping Voltage

V_C

0.88

Clamping Voltage TLP

Dynamic Resistance

V_C

R_DYN

Vdc=0, f=1MHz,

Any I/O pins to GND

0.4

0.2

Off State Junction Capacitance

C_J

Vdc=0, f=1MHz

Between any I/O pins

Notes:

1. T_J= 25ºC unless otherwise specified

2. Transmission Line Pulse (TLP) test condition: Z0=50Ω, tp=100ns

Rev. 0a 02/05/20

Meritek Electronics Corporation | www.meritekusa.com

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