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ME3V32U9D023  PDF预览

ME3V32U9D023

更新时间: 2024-11-11 18:09:15
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 539K
描述
ME3V32U9D023 | 9V Clamp 3.3V ESD 2Ch Uni-dir 0.4pF DFN10063

ME3V32U9D023 数据手册

 浏览型号ME3V32U9D023 的Datasheet PDF文件第2页浏览型号ME3V32U9D023 的Datasheet PDF文件第3页 
ESD Supressor  
3.3V 2-Unidirectional DFN1006-3  
ME3V32U9D023  
FEATURE  
IEC 61000-4-2 ESD: ±18KV (Air) ±15KV (Contact)  
IEC 61000-4-4 EFT: 40A (5/50ns)  
IEC 61000-4-5 Lightning: 3A (8/20μs)  
Low Capacitance  
Low Clamping Voltage  
Solid-State Silicon-Avalanche Technology  
APPLICATION  
USB 3.0 Data Lines Protection  
Data and I/O Lines Protection  
Video Lines Protection  
Hand Held Portable Devices  
Destops and Notebooks  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
±15  
Unit  
KV  
KV  
˚C  
ESD Voltage per IEC61000-4-2 (Contact discharge)  
ESD Voltage per IEC61000-4-2 (Air discharge)  
Operating & Storage Temperature Range  
VESD  
±18  
TJ, TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
VRWM  
VBR  
IR  
--  
--  
4
--  
--  
3.3  
--  
V
V
IBR=1mA  
VR=3.3V  
--  
--  
--  
--  
--  
--  
--  
50  
9
nA  
IPP=1A, tp=8/20μs  
IPP=3A, tp=8/20μs  
IPP=8A, tp=100ns  
IPP=16A, tp=100ns  
tp=100ns  
--  
Clamping Voltage  
VC  
V
--  
13  
--  
15  
22  
0.88  
Clamping Voltage TLP  
Dynamic Resistance  
VC  
V
--  
RDYN  
--  
Ω
Vdc=0, f=1MHz,  
Any I/O pins to GND  
--  
--  
--  
--  
0.4  
0.2  
Off State Junction Capacitance  
CJ  
pF  
Vdc=0, f=1MHz  
Between any I/O pins  
Notes:  
1. TJ= 25ºC unless otherwise specified  
2. Transmission Line Pulse (TLP) test condition: Z0=50Ω, tp=100ns  
Rev. 0a 02/05/20  
Meritek Electronics Corporation | www.meritekusa.com  

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