Datasheet > ME3V32B9V8SO8

ME3V32B9V8SO8

更新时间： 2024-11-11 18:09:51

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	688K
描述
ME3V32B9V8SO8 \| 9.8V Clamp 3.3V ESD 2-Ch Bi-dir 2pF SOIC08

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数据手册

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ME3V32B9V8SO8 数据手册

ESD Suppressor

3.3V 2-Bidirectional SOIC-08

ME3V32B9V8SO8

FEATURE

 IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)

 ESD Protection for two Bidirectional Channels

 Low Leakage Current

 Low Operating and Clamping Voltage

 Solid-State Silicon-Avalanche Technology

APPLICATION

 10/100/1000 Ethernet

 USB 2.0 and 3.0 Interface

 Personal Digital Assistants (PDA)

 Serial ATA Protection

 Digital Visual Interface (DVI)

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

Unit

ESD Voltage (Contact discharge)

±30

V_ESD

ESD Voltage (Air discharge)

Peak Pulse Power (tp=8/20μs)

P_PP

T_L

200

˚C

Lead Soldering Temperature (10 Seconds)

Operating & Storage Temperature Range

260

T_J, T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

3.5

3.3

I_BR=1mA

V_R=3.3V

μA

I_PP=1A, tp=8/20μs

I_PP=12A, tp=8/20μs

Vdc=0, f=1MHz

9.8

1.5

Clamping Voltage

V_C

C_J

Off State Junction Capacitance

2.0

Notes: T_A= 25°C unless otherwise specified.

Rev. 0a 02/03/20

Meritek Electronics Corporation | www.meritekusa.com

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