Datasheet > ME3V31B6D0210

ME3V31B6D0210

更新时间： 2024-09-22 18:09:51

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	542K
描述
ME3V31B6D0210 \| 6V Clamp 3.3V ESD 1Ch Bi-dir 10pF DFN1006

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ME3V31B6D0210 数据手册

ESD Supressor

3.3V Bidirectional DFN1006

ME3V31B6D0210

FEATURE

 IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)

 IEC 61000-4-4 EFT: 40A (5/50ns)

 IEC 61000-4-5 Lightning: 5A (8/20μs)

 ESD Protection for one Bidirectional Channel

 Ultra Low Capacitance

 Low Clamping Voltage

 Low Leakage Current

APPLICATION

 Mobile Phones

 Hand Held Portable Applications

 Computer Interfaces Protection

 Microprocessors Protection

 Serial and Parallel Ports Protections

MAXIMUM RATINGS AND CHARACTERISTICS

Parameter

Symbol

Value

±30

Unit

˚C

ESD Voltage per IEC61000-4-2 (Contact discharge)

ESD Voltage per IEC61000-4-2 (Air discharge)

Operating & Storage Temperature Range

V_ESD

±30

T_J, T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Punch Through Voltage

Snap Break Voltage

V_RWM

V_PT

V_SB

I_R

3.5

2.8

3.3

V_PT=2µA

V_SB=50mA

V_R=3.3V

Reverse Leakage Current

0.5

μA

I_PP=1A, tp=8/20μs

I_PP=5A, tp=8/20μs

I_PP=8A, tp=100ns

I_PP=16A, tp=100ns

tp=100ns

Clamping Voltage

V_C

Clamping Voltage TLP

8.5

0.19

Dynamic Resistance

R_DYN

C_J

Off State Junction Capacitance

Vdc=0, f=1MHz

Notes:

1. T_J= 25ºC unless otherwise specified

2. Transmission Line Pulse (TLP) test condition: Z0=50Ω, tp=100ns

Rev. 0a 02/05/20

Meritek Electronics Corporation | www.meritekusa.com

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