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ME3V31B13S323F  PDF预览

ME3V31B13S323F

更新时间: 2024-11-09 18:09:55
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 590K
描述
ME3V31B13S323F | 7.5V Clamp 3V ESD 1Ch Bi-dir 1.2pF SOD323F

ME3V31B13S323F 数据手册

 浏览型号ME3V31B13S323F 的Datasheet PDF文件第2页浏览型号ME3V31B13S323F 的Datasheet PDF文件第3页 
ESD Supressor  
3.3V Bidirectional SOD-323F  
ME3V31B13S323F  
FEATURE  
IEC 61000-4-2 ESD: ±30KV (Air) ±30KV (Contact)  
IEC 61000-4-4 EFT: 40A (5/50ns)  
IEC 61000-4-5 Lightning: 15A (8/20µs)  
ESD Protection for one Bidirectional Channel  
Very Low Capacitance: 1.2pF Max  
APPLICATION  
Digital Cameras  
Desktops, Notebooks and Servers  
Portable Devices  
Control Signal Lines Protection  
Serial and Parallel Ports Protection  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
±30  
Unit  
ESD Voltage (Contact discharge)  
VESD  
KV  
ESD Voltage (Air discharge)  
Operating Temperature Range  
Storage Temperature Range  
±30  
˚C  
˚C  
TJ  
-55~+125  
-55~+150  
TSTG  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
VRWM  
VBR  
Min.  
--  
Typ.  
--  
Max.  
3
Unit  
V
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
--  
IBR=1mA  
VR=3V  
4.75  
--  
--  
5.25  
20  
7.5  
--  
V
IR  
--  
μA  
IPP=1A, tp=8/20μs  
IPP=5A, tp=8/20μs  
IPP=4A, tp=100ns  
IPP=8A, tp=100ns  
tp=100ns  
--  
--  
Clamping Voltage  
VC  
VC  
V
V
--  
10.5  
10  
13  
0.75  
0.9  
--  
--  
Clamping Voltage TLP  
--  
--  
Dynamic Resitance  
RDYN  
CJ  
--  
--  
Off State Junction Capacitance  
Vdc=0, Bias, f=1MHz  
--  
1.2  
pF  
Notes:  
1. TA= 25ºC unless otherwise specified  
2. Testing using Transmission Line Pulse (TLP) conditions: Z0 = 50Ω, tp=100ns  
Rev. 0a 01/16/20  
Meritek Electronics Corporation | www.meritekusa.com  

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