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ME122B25S23A10  PDF预览

ME122B25S23A10

更新时间: 2024-11-20 18:10:03
品牌 Logo 应用领域
MERITEK /
页数 文件大小 规格书
3页 626K
描述
ME122B25S23A10 | 19V Clamp 12V ESD 2Ch Bi-dir 10pF SOT23 AECQ

ME122B25S23A10 数据手册

 浏览型号ME122B25S23A10 的Datasheet PDF文件第2页浏览型号ME122B25S23A10 的Datasheet PDF文件第3页 
ESD Suppressor AEC-Q101  
12V 2-Bidirectional SOT-23  
ME122B25S23A10  
FEATURE  
IEC 61000-4-2 ESD: ±15KV (Air) ±8KV (Contact)  
IEC 61000-4-4 EFT: 40A (5/50ns)  
IEC 61000-4-5 Lightning: 3A (8/20µs)  
ESD Protection for two Bidirectional Channels  
Low Leakage Current, Maximum of 0.05µA at rated Voltage  
AEC-Q101 Qualified  
APPLICATION  
Digital Cameras  
Audio and Video Equipment  
Control Signal Lines Protection  
Computers and Peripherals  
Communication Systems  
MAXIMUM RATINGS AND CHARACTERISTICS  
Parameter  
Symbol  
Value  
±30  
Unit  
ESD Voltage (Contact discharge)  
VESD  
KV  
ESD Voltage (Air discharge)  
Operating Temperature Range  
Storage Temperature Range  
±30  
˚C  
˚C  
TJ  
-55~+125  
-55~+150  
TSTG  
ELECTRICAL CHARACTERISTICS  
Parameter  
Condition  
Symbol  
VRWM  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-Off Voltage  
--  
--  
--  
12  
V
IBR=1mA,  
Between any I/O pins to GND  
Reverse Breakdown Voltage  
Reverse Leakage Current  
VBR  
IR  
14  
--  
16.50  
V
VR=12.00V  
--  
--  
--  
--  
--  
--  
--  
--  
--  
0.05  
19  
25  
--  
µA  
IPP=1A, tp=8/20μs  
IPP=3A, tp=8/20μs  
Clamping Voltage  
VC  
VC  
V
V
--  
IPP=4A, tp=100ns  
IPP=8A, tp=100ns  
tp=100ns  
17.70  
19.50  
0.45  
--  
Clamping Voltage TLP  
--  
Dynamic Resistance  
RDYN  
CJ  
--  
Off State Junction Capacitance  
Vdc=0, Bias, f=1MHz  
10  
pF  
Notes:  
1. TJ= 25ºC unless otherwise specified  
2. Testing using Transmission Line Pulse (TPL) conditions: Z0 = 50Ω, tp = 100ns  
Rev. 0a 01/09/20  
Meritek Electronics Corporation | www.meritekusa.com  

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