Datasheet > MDT08N017RH

MDT08N017RH

更新时间： 2024-11-12 17:15:23

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
7页	661K
描述
PackageTOLL

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中文翻译

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数据手册

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MDT08N017RH 数据手册

Magnachip Power Technology

MDT08N017RH

Single N-channel Trench MOSFET 80V 1.7mΩ 300A

General description

MDT08N017RH uses advanced Magnachip’s MOSFET

technology, which provides high performance in on-state

resistance, fast switching performance, and excellent quality.

TOLL

Tab

These devices can also be utilized in industrial applications

such as high power drives of E-Vehicles(E-bike), DC/DC

converter and BMS, general purpose applications.

Bottom View

Top View

Features and benefits

Magnachip’s MOSFET technology

Very low on-resistance R_DS(on)

•

Tab

100% Avalanche / Rg / △VDS Tested

Applications

Pin 1

Motor Inverter

•

Battery Management

Power Inverter

Pin 2-8

Key performance parameters

V_DS

0.0017

300

R_{DS(on), max}

I_D

Q_G

183

^oC

Junction temperature_{, max}

175

Ordering information

Type / Ordering Code

MDT08N017RH

Package

Marking

Packing

RoHS Status

TOLL

MDT08N017

Tape & Reel

Halogen Free

http://www.magnachip.com

1 / 7

Oct. 2021. Rev. 1.0

Product data sheet

All information provided in this document is subject to legal disclaimers

12 3 4 5 6 7

中文翻译

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