Datasheet > MDS3652URH

MDS3652URH

更新时间： 2024-10-31 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	906K
描述
Single P-Channel Trench MOSFET, -30V, -11A, 17m(ohm)

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MDS3652URH 数据手册

MDS3652

Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ

General Description

Features

The MDS3652 uses advanced MagnaChip’s MOSFET

Technology to provide low on-state resistance, high

switching performance and excellent reliability



V_DS= -30V

I_D= -11A @V_GS= -10V

R_DS(ON)

< 17mΩ @V_GS= -10V

< 27mΩ @V_GS= -4.5V

Applications



Load Switch

General purpose applications

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (T_a=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

-11

T_a=25^oC

T_a=100^oC

Continuous Drain Current

Pulsed Drain Current

Power Dissipation⁽¹⁾

I_D

-7

I_DM

P_D

-60

T_a=25^oC

T_a=100^oC

3.1

1.2

Single Pulse Avalanche Energy⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾

^oC/W

Thermal Resistance, Junction-to-Case

R_θJC

Jul 2011. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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