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MDNA660U2200PTEH PDF预览

MDNA660U2200PTEH

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 419K
描述
三相桥系列提供多种封装和高达2200V的击穿电压。

MDNA660U2200PTEH 数据手册

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MDNA660U2200PTEH  
3~  
Rectifier  
High Voltage Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
A
A
= 2200  
660  
=
=
5000  
3~ Rectifier Bridge + NTC  
Part number  
MDNA660U2200PTEH  
Backside: isolated  
1-11  
12-22  
60  
61  
47-53  
39-45  
31-37  
54-58  
23-30  
E3-Pack  
Features / Advantages:  
Applications:  
Package:  
Package with DCB ceramic  
Improved temperature and power cycling  
Planar passivated chips  
Very low forward voltage drop  
Very low leakage current  
Diode for main rectification  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
PressFit-Pins for PCB mounting  
Height: 17 mm  
V~  
4300  
For three phase bridge configurations  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
Base plate: Copper  
internally DCB isolated  
Advanced power cycling  
Phase Change Material available  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220g  
© 2019 IXYS all rights reserved  

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