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MDMA280UB1600PTED PDF预览

MDMA280UB1600PTED

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管二极管装置
页数 文件大小 规格书
7页 242K
描述
三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。

MDMA280UB1600PTED 数据手册

 浏览型号MDMA280UB1600PTED的Datasheet PDF文件第2页浏览型号MDMA280UB1600PTED的Datasheet PDF文件第3页浏览型号MDMA280UB1600PTED的Datasheet PDF文件第4页浏览型号MDMA280UB1600PTED的Datasheet PDF文件第5页浏览型号MDMA280UB1600PTED的Datasheet PDF文件第6页浏览型号MDMA280UB1600PTED的Datasheet PDF文件第7页 
MDMA280UB1600PTED  
3~  
Rectifier  
Brake  
Chopper  
Standard Rectifier Module  
VRRM  
V V  
CES  
= 1600  
= 1200 V  
A
280 IC25  
IDAV  
180 A  
=
=
=
=
A
1500 VCE(sat)  
V
1,7  
IFSM  
3~ Rectifier Bridge + Brake Unit + NTC  
Part number  
MDMA280UB1600PTED  
Backside: isolated  
40-43  
21-22  
32  
12-14  
7-9  
17-19  
2-4  
33  
23-25  
47-50  
29 28  
E2-Pack  
Features / Advantages:  
Applications:  
Package:  
Package with DCB ceramic  
Improved temperature and power cycling  
Planar passivated chips  
3~ Rectifier with brake unit  
for drive inverters  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
4300  
Very low forward voltage drop  
Very low leakage current  
PressFit-Pins for PCB mounting  
Height: 17 mm  
NTC  
Base plate: Copper  
X2PT - 2nd generation Xtreme light Punch Through  
Rugged X2PT design results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
internally DCB isolated  
Advanced power cycling  
Phase Change Material available  
- low EMI  
- square RBSOA @ 2x Ic  
Thin wafer technology combined with X2PT design  
results in a competitive low VCE(sat) and low  
thermal resistance  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220h  
© 2019 IXYS all rights reserved  

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