Datasheet > MDHT4N20YURH

MDHT4N20YURH

更新时间： 2024-11-18 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	925K
描述
N-Channel MOSFET 200V, 0.85A, 1.35(ohm)

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MDHT4N20YURH 数据手册

MDHT4N20Y

N-Channel MOSFET 200V, 0.85A, 1.35Ω

General Description

Features

The MDHT4N20Y uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 200V

 I_D= 0.85A

 R_DS(ON)≤ 1.35Ω

@V_GS= 10V

MDHT4N20Y is suitable device for LED TV and

general purpose applications.

Applications

 Power Supply

 PFC

 LED TV

SOT-223

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

200

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC

T_C=100^oC

0.85

0.54

3.4

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

I_DM

P_D

T_C=25^oC

Derate above 25 ^oC

2.1

0.017

5.5

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Repetitive Pulse Avalanche Energy⁽⁴⁾

Avalanche current⁽¹⁾

Dv/dt

E_AR

0.21

0.85

I_AR

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient *

* When mounted on the minimum pad size recommended (PCM Mount)

Symbol

Rating

Unit

R_θJA

^oC/W

Oct 2011 Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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