Datasheet > MD03D125UK

MD03D125UK

更新时间： 2024-09-20 14:54:11

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	378K
描述
小信号金氧半電晶體

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数据手册

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MD03D125UK 数据手册

MD03D125UK

Dual N-Channel Enhancement Mode MOSFET

Features

• Extremely low threshold voltage

• Advanced trench cell design

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 1A

Classification

Voltage Range(V)

< 125

Q1: 1.Gate 2.Source 6.Drain

Q2: 3.Gate 2.Source 4.Drain

SOT-26 Plastic Package

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (T_a= 25℃ unless otherwise specified) (Q1/Q2)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

V_DS

± 12

V_GS

I_D

Peak Drain Current, Pulsed ¹⁾

I_DM

Total Power Dissipation

P_tot

900

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics (Q1/Q2)

Parameter

Symbol

R_θJA

Max.

139

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

℃

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 6

Dated:19/07/2023 Rev:02

12 3 4 5 6

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