Datasheet > MD02P088U

MD02P088U

更新时间： 2024-09-20 14:53:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	433K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MD02P088U 数据手册

MD02P088U

P-Channel Enhancement Mode MOSFET

Features

• Low Threshold Voltage

Applications

• Portable appliances

• Battery management

• Low power DC to DC converter

1.Drain 2. Drain 3. Gate

4.Source 5. Drain 6. Drain

SOT-26 Plastic Package

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

-V_DS

V_GS

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

± 10

-I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Power Dissipation ²⁾

-I_DM

P_D

1.25

t ≤ 10 s

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

156

Unit

Thermal Resistance from Junction to Ambient ²⁾steady

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

℃/W

1 / 6

Dated: 21/01/2021 Rev: 01

12 3 4 5 6

中文翻译

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