Datasheet > MD02P052U

MD02P052U

更新时间： 2024-09-20 14:52:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	425K
描述
小信号金氧半電晶體

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中文翻译

获取价格

数据手册

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MD02P052U 数据手册

MD02P052U

P-Channel Enhancement Mode MOSFET

Features

• Low Threshold Voltage

Applications

1.Drain 2. Drain 3. Gate

4.Source 5. Drain 6. Drain

SOT-26 Plastic Package

• Portable appliances

• Battery management

• Low power DC to DC converter

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

V_GS

-I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

± 10

4.2

Continuous Drain Current

Pulsed Drain Current ¹⁾

-I_DM

P_tot

Power Dissipation ²⁾

1.25

150

Operating Junction Temperature

Storage Temperature Range

T_j

℃

T_stg

- 55 to + 150

℃

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

Unit

100 ²⁾

Thermal Resistance from Junction to Ambient

℃

270 ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by T_J(MAX)

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad.

1 / 6

Dated: 23/02/2023 Rev:03

12 3 4 5 6

中文翻译

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