Datasheet > MD02P035U

MD02P035U

更新时间： 2024-11-09 14:55:35

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	760K
描述
小信号金氧半電晶體

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中文翻译

获取价格

数据手册

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MD02P035U 数据手册

MD02P035U

P-Channel Enhancement Mode MOSFET

Features

• Extremely low threshold voltage

Application

• Portable appliances

• Battery management

• High speed switch

1. Drain 2. Drain 3. Gate

4. Source 5. Drain 6. Drain

SOT-26 Plastic Package

• Low power DC to DC Converter

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

-V_DS

V_GS

-I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

± 10

Peak Drain Current, Pulsed ¹⁾

Power Dissipation ²⁾

-I_DM

P_tot

T_J

℃

150

Operating Junction Temperature

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

62.5

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,limited by T_J(MAX)

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

℃/W

1 / 6

Dated: 31/05/2021 Rev:01

12 3 4 5 6

中文翻译

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