MCTL300N10YB
Features
•
•
•
•
Split Gate Trench MOSFET Technology
Excellent Package for Heat Dissipation
Halogen Free. “Green” Device (Note 1)
High Density Cell Design for Low RDS(on)
N-CHANNEL
•
•
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
MOSFET
•
Moisture Sensitivity Level 1
Maximum Ratings
TOLL-8L
•
•
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
H
A
C
9
Q
θ
•
•
Thermal Resistance: 38°C/W Junction to Ambient (Note 2)
Thermal Resistance: 0.4°C/W Junction to Case
G
F
K
Parameter
Rating
100
Symbol
VDS
Unit
V
O
θ
Drain-Source Voltage
Gate-Source Volltage
1
2
3
4
5
6
7
8
R
J
E
B
I
D
VGS
±20
V
S
P
θ
θ
300
TC=25°C
M
N
ID
Continuous Drain Current
A
TC=100°C
189
1200
312
Pulsed Drain Current (Note 3)
Total Power Dissipation(Note 4)
IDM
PD
A
L
W
Single Pulsed Avalanche Energy(Note 5)
EAS
2116
mJ
DIMENSIONS
INCHES MM
MIN MAX
1RWHꢀ
DIM
NOTE
MIN
MAX
2.40
0.90
9.90
0.50
0.60
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ꢅꢆꢇꢇSSPꢃFKORULQHꢃꢉꢅꢁꢊꢇꢇSSPꢃWRWDOꢃ%Uꢃꢋꢃ&OꢌꢃDQGꢃꢅꢁꢇꢇꢇSSPꢃDQWLPRQ\ꢃFRPSRXQGVꢂ
A
B
C
D
E
F
G
H
I
0.087 0.094 2.20
0.028 0.035 0.70
0.382 0.390 9.70
0.017 0.020 0.42
0.016 0.024 0.40
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0.405 0.417 10.28 10.58
0.122 0.138 3.10 3.50
0.382 0.398 9.70 10.10
0.311 0.327 7.90 8.30
0.047 1.20
0.452 0.468 11.48 11.88
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ꢊꢂ 7- ꢍꢊǔꢈꢃ9'' 809ꢈꢃ9*6 109ꢈꢃ/ 2P+.
J
BSC
K
L
Internal Structure and Marking Code
0.266 0.281 6.75
7.15
0.315
8.00
M
N
O
P
Q
R
S
θ
D
0.118 0.130 3.00
0.157 0.172 3.98
0.055 0.071 1.40
0.024 0.031 0.60
0.020 0.028 0.50
0.039 0.051 1.00
3.30
4.38
1.80
0.80
0.70
1.30
10°
MCC
1. GATE
2,3,4,5,6,7,8. SOURCE
9. DRAIN
MCTL300N10YB
G
S
4°
10°
4°
8
2
PIN 1
Rev.4-2-08022023
1/6
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