Datasheet > MCTL300N10Y

MCTL300N10Y

更新时间： 2024-09-22 14:53:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
5页	1491K
描述
Tape&Reel:2Kpcs/Reel;

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数据手册

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MCTL300N10Y 数据手册

MCTL300N10Y

Features

•

Split Gate Trench MOSFET Technology

Excellent Package for Heat Dissipation

High Density Cell Design for Low R_DS(on)

•

Halogen Free Available Upon Request By Adding Suffix "-HF"

Epoxy Meets UL 94 V-0 Flammability Rating

N-CHANNEL

MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

TOLL-8L

Thermal Resistance: 40°C/W Junction to Ambient ⁽¹⁾

Thermal Resistance: 0.25°C/W Junction to Case ⁽¹⁾

Parameter

Rating

100

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±20

T_C=25°C

300

I_D

Continuous Drain Current

T_C=100°C

267

Pulsed Drain Current ⁽²⁾

Total Power Dissipation

I_DM

P_D

1200

500

Single Pulsed Avalanche Energy⁽³⁾

Note:

E_AS

800

DIMENSIONS

INCHES MM

MIN MAX

1.Surface Mounted on Minimum Footprint Pad Area.

2.Pulse Test: Pulse Width≤10µs,Duty Cycle ≤1%.

3.T_J=25°C, L=1.0mH, V_DD=50V.

DIM

NOTE

MIN

MAX

2.40

0.90

9.90

0.50

0.60

0.087 0.094 2.20

0.028 0.035 0.70

0.382 0.390 9.70

0.017 0.020 0.42

0.016 0.024 0.40

Internal Structure and Marking Code

0.405 0.417 10.28 10.58

0.122 0.138 3.10 3.50

0.382 0.398 9.70 10.10

0.311 0.327 7.90 8.30

0.047 1.20

0.452 0.468 11.48 11.88

MCC

1. GATE

MCTL300N10Y

2,3,4,5,6,7,8. SOURCE

9. DRAIN

BSC

0.266 0.281 6.75

7.15

0.315

8.00

PIN 1

0.118 0.130 3.00

0.157 0.172 3.98

0.055 0.071 1.40

0.024 0.031 0.60

0.020 0.028 0.50

0.039 0.051 1.00

3.30

4.38

1.80

0.80

0.70

1.30

10°

4°

10°

4°

Rev.3-4-08022023

1/5

MCCSEMI.COM

12 3 4 5

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