MCTL270N04YHE3
Features
•
•
•
Split Gate Trench Mosfet Technology
Excellent Package for Heat Dissipation
High Density Cell Design for Low RDS(on)
•
•
•
•
Moisture Sensitivity Level 1
Halogen Free."Green" Device(Note1)
N-CHANNEL
Epoxy Meets UL 94 V-0 Flammability Rating
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
•
•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
TOLL-8L
H
Thermal Resistance: 40°C/W Junction to Ambient (Note2)
A
C
•
•
9
Q
θ
Thermal Resistance: 0.32°C/W Junction to Case
Parameter
Rating
40
Symbol
VDS
Unit
V
G
F
K
Drain-Source Voltage
Gate-Source Volltage
O
VGS
±20
V
θ
1
2
3
4
5
6
7
8
R
J
E
B
I
TC=25°C
270
D
A
ID
Continuous Drain Current
Pulsed Drain Current (Note3)
S
P
TC=100°C
190
θ
θ
M
N
IDM
PD
1080
468
A
Total Power Dissipation(Note4)
W
L
Single Pulsed Avalanche Energy(Note5)
EAS
mJ
1521
1RWHꢀ
DIMENSIONS
INCHES MM
MIN MAX
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ꢅꢆꢇꢇSSPꢃFKORULQHꢃꢉꢅꢁꢊꢇꢇSSPꢃWRWDOꢃ%Uꢃꢋꢃ&OꢌꢃDQGꢃꢅꢁꢇꢇꢇSSPꢃDQWLPRQ\ꢃFRPSRXQGVꢂ
DIM
NOTE
MIN
MAX
2.40
0.90
9.90
0.50
0.60
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&RSSHUꢈꢃLQꢃDꢃVWLOOꢃDLUꢃHQYLURQPHQWꢃZLWKꢃ7$ꢃ ꢍꢊ&ꢂꢃ7KHꢃ3RZHUꢃGLVVLSDWLRQꢃ3'60ꢃLVꢃEDVHG
RQꢃ5ș-$ꢃWʇꢀꢁꢇVꢃDQGꢃWKHꢃPD[LPXPꢃDOORZHGꢃMXQFWLRQꢃWHPSHUDWXUHꢃRIꢃꢁ75&ꢂꢃ7KHꢃYDOXHꢃLQ
A
B
C
D
E
F
G
H
I
0.087 0.094 2.20
0.028 0.035 0.70
0.382 0.390 9.70
0.017 0.020 0.42
0.016 0.024 0.40
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ꢑꢂ 5HSHWLWLYHꢃUDWLQJꢒꢃSXOVHꢃZLGWKꢃOLPLWHGꢃE\ꢃPD[ꢂꢃMXQFWLRQꢃWHPSHUDWXUHꢂ
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0.405 0.417 10.28 10.58
0.122 0.138 3.10 3.50
0.382 0.398 9.70 10.10
0.311 0.327 7.90 8.30
0.047 1.20
0.452 0.468 11.48 11.88
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Internal Structure and Marking Code
J
BSC
K
L
0.266 0.281 6.75
7.15
D
0.315
8.00
M
N
O
P
Q
R
S
θ
0.118 0.130 3.00
0.157 0.172 3.98
0.055 0.071 1.40
0.024 0.031 0.60
0.020 0.028 0.50
0.039 0.051 1.00
3.30
4.38
1.80
0.80
0.70
1.30
10°
1. GATE
2,3,4,5,6,7,8. SOURCE
9. DRAIN
MCC
G
MCTL270N04Y
S
4°
10°
4°
8
2
PIN 1
Rev.4-1-11172023
1/6
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