Datasheet > MCT03N06

MCT03N06

更新时间： 2024-11-20 14:54:35

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	906K
描述
Tape&Reel;

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数据手册

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MCT03N06 数据手册

MCT03N06

Features

•

Trench LV MOSFET Technology

Moisture Sensitivity Level 1

Halogen Free. “Green” Device ^{(Note 1)}

N-CHANNEL

MOSFET

Epoxy Meets UL 94 V-0 Flammability Rating

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 60°C/W Junction to Ambient^{(Note 2)}

SOT-223

Parameter

Drain-Source Voltage

Rating

Symbol

Unit

V_DS

Gate-Source Volltage

V_GS

±20

T_A=25℃

T_A=70℃

I_D

Continuous Drain Current

2.4

Pulsed Drain Current^{(Note 3)}

I_DM

P_D

Total Power Dissipation^{(Note 4)}

2.1

Note:

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

DIMENSIONS

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

INCHES

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

DIM

NOTE

TYP.

MIN MAX MIN MAX

0.248 0.264 6.30 6.70

0.130 0.146 3.30 3.70

0.264 0.287 6.70 7.30

0.001 0.004 0.02 0.10

0.114 0.122 2.90 3.10

Copper, in a still air environment with T_A=25°C.

3. Repetitive rating; pulse width limited by max. junction temperature.

4. P_Dis based on max. junction temperature, using junction-Ambient thermal resistance.

0.091

2.30

--- 1.80

--- 0.071

0.009 0.014 0.23 0.35

0.030 --- 0.75 ---

0.026 0.033 0.66 0.84

Internal Structure and Marking Code

1.GATE

2.DRAIN

3.SOURCE

4.DRAIN

T03N06

Rev.4-1-09112023

1/6

MCCSEMI.COM

12 3 4 5 6

中文翻译

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